Datasheet4U Logo Datasheet4U.com

BUZ255 - Power Transistor

📥 Download Datasheet

Datasheet preview – BUZ255

Datasheet Details

Part number BUZ255
Manufacturer Siemens Semiconductor Group
File Size 202.32 KB
Description Power Transistor
Datasheet download datasheet BUZ255 Datasheet
Additional preview pages of the BUZ255 datasheet.
Other Datasheets by Siemens Semiconductor Group

Full PDF Text Transcription

Click to expand full text
BUZ 272 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 272 VDS -100 V ID -15 A RDS(on) 0.3 Ω Package TO-220 AB Ordering Code C67078-S1454-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -15 Unit A ID IDpuls -60 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 290 mJ ID = -15 A, VDD = -25 V, RGS = 25 Ω L = 1.93 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ...
Published: |