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SIPMOS® Power Transistor
q N channel q Enhancement mode q FREDFET
BUZ 205
Type BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
1.0 Ω
Package 1) TO-220 AB
Ordering Code C67078-A1401-A2
Maximum Ratings Parameter Continuous drain current, TC = 35 ˚C Pulsed drain current, TC = 25 ˚C Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Power dissipation, TC = 25 ˚C Operating and storage temperature range Thermal resistance, chip-case DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values 6.0 24 400 400 ± 20 75 – 55 ... + 150 ≤ 1.67 E 55/150/56 W ˚C K/W – V Unit A
ID ID puls VDS VDGR VGS Ptot Tj , Tstg Rth JC
1) See chapter Package Outlines.
Semiconductor Group
508
BUZ 205
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified.
BUZ205 Datasheet
