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BUZ 215
SIPMOS ® Power Transistor
• N channel • Enhancement mode • FREDFET
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 215
VDS
500 V
ID
5A
RDS(on)
1.5 Ω
Package TO-220 AB
Ordering Code C67078-A1400-A2
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 500 500 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 5
TC = 30 °C
Pulsed drain current
IDpuls
20
TC = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 75
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 1.
BUZ215 Datasheet
