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isc N-Channel Mosfet Transistor
BUZ211
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
9
A
IDM
Drain Current-Single Plused
36
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max.
BUZ211 Datasheet
