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isc N-Channel Mosfet Transistor
BUZ20
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power
bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.
BUZ20 Datasheet
