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Semiconductor
Data Sheet
BUZ20
October 1998 File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power
Features
[ /Title (BUZ20 ) /Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
• 12A, 100V • rDS(ON) = 0.200Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
(12A, transistors requiring high speed and low gate drive power. 100V, This type can be operated directly from integrated circuits. 0.200 Formerly developmental type TA17411.
BUZ20 Datasheet
