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Semiconductor
Data Sheet
BUZ71A
October 1998 File Number 2419.1
13A, 50V, 0.120 Ohm, N-Channel Power
Features
[ /Title (BUZ71 A) /Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
• 13A, 50V • rDS(ON) = 0.120Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
(13A, transistors requiring high speed and low gate drive power.
50V,
This type can be operated directly from integrated circuits.
0.120 Formerly developmental type TA9770.