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BUZ71 - N-Channel Power MOSFET

Features

  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2001 Fairchild Semic.

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Datasheet Details

Part number BUZ71
Manufacturer Fairchild Semiconductor
File Size 83.28 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BUZ71 Datasheet
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Data Sheet December 2001 BUZ71 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9770. Ordering Information PART NUMBER PACKAGE BRAND BUZ71 TO-220AB BUZ71 NOTE: When ordering, use the entire part number. Features • 14A, 50V • rDS(ON) = 0.
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