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BUZ11 - N-Channel Power MOSFET

Features

  • 30A, 50V.
  • rDS(ON) = 0.040Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11 Absolute Maximum Rati.

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Datasheet Details

Part number BUZ11
Manufacturer Fairchild Semiconductor
File Size 470.27 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BUZ11 Datasheet
Additional preview pages of the BUZ11 datasheet.

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Full PDF Text Transcription

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Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Ordering Information PART NUMBER PACKAGE BRAND BUZ11_NR4941 TO-220AB BUZ11 NOTE: When ordering, use the entire part number. Features • 30A, 50V • rDS(ON) = 0.
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