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BUZ20
Semiconductor
Data Sheet
October 1998
File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET
Features
• 12A, 100V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (12A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 100V, • High Input Impedance 0.200 Formerly developmental type TA17411.
BUZ20 Datasheet
