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BUZ42
Semiconductor
Data Sheet
October 1998
File Number 2417.1
4A, 500V, 2.000 Ohm, N-Channel Power MOSFET
Features
• 4A, 500V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 2.000Ω (BUZ42 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (4A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, • High Input Impedance 2.000 Formerly developmental type TA17415.
BUZ42 Datasheet
