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HRLU85N10H
Fab 2016
HRLU85N10H
100V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free
Application
DC-DC Conversion Hard Switching and High Speed Circuit Power Tools UPS, SSR
Key Parameters
Parameter BVDSS ID
RDS(on), typ @10V RDS(on), typ @4.5V
Value 100 105 7.1 8.4
Unit V A Pȍ Pȍ
Package & Internal Circuit
I-PAK
G
D S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TC = 25 TC = 100
Single Pulsed Avalanche Energy
L=0.
HRLU85N10H Datasheet
