Datasheet4U Logo Datasheet4U.com

HRLU125N06K - N-Channel MOSFET

Download the HRLU125N06K datasheet PDF. This datasheet also covers the HRLD125N06K variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A D-PAK I-PAK 2 1 3 HRD125N06K 1 2 3 HRU125N06K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HRLD125N06K-SemiHow.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HRLU125N06K
Manufacturer SemiHow
File Size 861.52 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLU125N06K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HRL0103C Silicon Schottky Barrier Diode Renesas Technology

Other Datasheets by SemiHow

Part Number Description
HRLU120N10H N-Channel Trench MOSFET
HRLU150N10K N-Channel MOSFET
HRLU1B8N10K N-Channel MOSFET
HRLU370N10K N-Channel MOSFET
HRLU43N06H N-Channel Trench MOSFET

Full PDF Text Transcription

Click to expand full text
HRLD125N06K_HRLU125N06K HRLD125N06K / HRLU125N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A D-PAK I-PAK 2 1 3 HRD125N06K 1 2 3 HRU125N06K 1.Gate 2. Drain 3.
Published: |