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HRLU1B8N10K - N-Channel MOSFET

Download the HRLU1B8N10K datasheet PDF. This datasheet also covers the HRLD1B8N10K variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 11.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 140 Pȍ (Typ. ) @VGS=10V ‰ Lower RDS(ON) : 185 Pȍ (Typ. ) @VGS=4.5V ‰ Built-in ESD Diode ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = Pȍ ID = 2.7 A D-PAK I-PAK 2 1 1 32 3 HRLD1B8N10K HRLU1B8N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HRLD1B8N10K-SemiHow.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HRLU1B8N10K
Manufacturer SemiHow
File Size 329.86 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLU1B8N10K Datasheet

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Full PDF Text Transcription

Click to expand full text
HRLD1B8N10K_HRLU1B8N10K HRLD1B8N10K / HRLU1B8N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 11.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 140 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 185 Pȍ (Typ.) @VGS=4.5V ‰ Built-in ESD Diode ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = Pȍ ID = 2.7 A D-PAK I-PAK 2 1 1 32 3 HRLD1B8N10K HRLU1B8N10K 1.Gate 2. Drain 3.
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