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HRLU370N10K - N-Channel MOSFET

Download the HRLU370N10K datasheet PDF. This datasheet also covers the HRLD370N10K variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A D-PAK I-PAK 2 1 1 32 3 HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HRLD370N10K-SemiHow.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HRLU370N10K
Manufacturer SemiHow
File Size 1.03 MB
Description N-Channel MOSFET
Datasheet download datasheet HRLU370N10K Datasheet

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Full PDF Text Transcription

Click to expand full text
HRLD370N10K_HRLU370N10K HRLD370N10K / HRLU370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A D-PAK I-PAK 2 1 1 32 3 HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3.
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