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HRLU120N10H - N-Channel Trench MOSFET

Features

  • ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capability ‰ Enhanced Avalanche Ruggedness ‰ 100% UIS Tested, 100% Rg Tested ‰ Lead free, Halogen Free.

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Datasheet Details

Part number HRLU120N10H
Manufacturer SemiHow
File Size 273.98 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet HRLU120N10H Datasheet

Full PDF Text Transcription

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HRLU120N10H Fab 2016 HRLU120N10H 100V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capability ‰ Enhanced Avalanche Ruggedness ‰ 100% UIS Tested, 100% Rg Tested ‰ Lead free, Halogen Free Application ‰ Synchronous Rectification in SMPS ‰ Hard Switching and High Speed Circuit ‰ DC/DC in Telecoms and Inductrial Key Parameters Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.5V Value 100 73 9.5 11.5 Unit V A Pȍ Pȍ Package & Internal Circuit I-PAK G D S Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ Single Pulsed Avalanche Energy L=0.
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