Datasheet4U Logo Datasheet4U.com

HRLU55N03K - N-Channel MOSFET

Download the HRLU55N03K datasheet PDF. This datasheet also covers the HRLD55N03K variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.2 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 7.5 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 30 V RDS(on) typ = 4.2mΩ ID = 100 A D-PAK I-PAK 2 1 1 32 3 HRLD55N03K HRLU55N03K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HRLD55N03K-SemiHow.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HRLU55N03K
Manufacturer SemiHow
File Size 929.53 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLU55N03K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HRL0103C Silicon Schottky Barrier Diode Renesas Technology

Other Datasheets by SemiHow

Part Number Description
HRLU120N10H N-Channel Trench MOSFET
HRLU125N06K N-Channel MOSFET
HRLU150N10K N-Channel MOSFET
HRLU1B8N10K N-Channel MOSFET
HRLU370N10K N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HRLD55N03K_HRLU55N03K HRLD55N03K / HRLU55N03K 30V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 7.5 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 30 V RDS(on) typ = 4.2mΩ ID = 100 A D-PAK I-PAK 2 1 1 32 3 HRLD55N03K HRLU55N03K 1.Gate 2. Drain 3.
Published: |