Datasheet4U Logo Datasheet4U.com

HFP9N80 - 800V N-Channel MOSFET

Features

  • ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 9 1.2 48 HFP9N80 TO-220 HFS9N80 TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Dra.

📥 Download Datasheet

Datasheet Details

Part number HFP9N80
Manufacturer SemiHow
File Size 259.01 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet HFP9N80 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFP13N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP13N50 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP15N06 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP17N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP4N65 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number Description
HFP9N50 N-Channel MOSFET
HFP10N60 N-Channel MOSFET
HFP10N60S N-Channel MOSFET
HFP10N60U N-Channel MOSFET
HFP10N65S N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFP9N80_HFS9N80 Oct 2016 HFP9N80 / HFS9N80 800V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 9 1.
Published: |