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HFP11N80Z - 800V N-Channel MOSFET

Features

  • ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant ‰ Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 11 0.78 74 HFP11N80Z TO-220 HFS11N80Z TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source.

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Datasheet Details

Part number HFP11N80Z
Manufacturer SemiHow
File Size 263.56 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet HFP11N80Z Datasheet

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Full PDF Text Transcription

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HFP11N80Z_HFS11N80Z Oct 2016 HFP11N80Z / HFS11N80Z 800V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant ‰ Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 11 0.
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