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HCS65R600T - N-Channel MOSFET

Features

  • ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 7.5 0.6 14 Unit V A ȍ nC.

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Datasheet Details

Part number HCS65R600T
Manufacturer SemiHow
File Size 197.47 KB
Description N-Channel MOSFET
Datasheet download datasheet HCS65R600T Datasheet

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Full PDF Text Transcription

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HCS65R600T Super Junction MOSFET Dec 2015 HCS65R600T 650V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 7.5 0.
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