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HCS65R1K0S - 650V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 4.8 1.0 9.3 Unit V A Ω nC.

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Datasheet preview – HCS65R1K0S

Datasheet Details

Part number HCS65R1K0S
Manufacturer SemiHow
File Size 264.44 KB
Description 650V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS65R1K0S Datasheet
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Full PDF Text Transcription

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HCS65R1K0S June 2019 HCS65R1K0S 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 4.8 1.0 9.
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