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HCS65R130FS - 650V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode.
  • Fast Recovery Time Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 25 130 65 Unit V A mΩ nC.

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Datasheet Details

Part number HCS65R130FS
Manufacturer SemiHow
File Size 290.37 KB
Description 650V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS65R130FS Datasheet
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Full PDF Text Transcription

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HCS65R130FS July 2020 HCS65R130FS 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode • Fast Recovery Time Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 25 130 65 Unit V A mΩ nC Application • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC to DC Converters • Telecom, Solar Package & Internal Circuit TO-220FS SYMBOL G D S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS VGS ID IDM1) EAS2) IAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) Drain
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