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HCS65R160T - N-Channel MOSFET

Features

  • ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 20 0.16 41 Unit V A ȍ nC.

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Datasheet Details

Part number HCS65R160T
Manufacturer SemiHow
File Size 281.04 KB
Description N-Channel MOSFET
Datasheet download datasheet HCS65R160T Datasheet
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Full PDF Text Transcription

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HCS65R160T Super Junction MOSFET Jan 2016 HCS65R160T 650V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 20 0.
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