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HCS65R110S - 650V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 29.1 110 75 Unit V A mΩ nC.

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Datasheet Details

Part number HCS65R110S
Manufacturer SemiHow
File Size 240.37 KB
Description 650V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS65R110S Datasheet
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HCS65R110S Dec 2019 HCS65R110S 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 29.
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