• Part: ECH8653
  • Description: N-Channel Silicon MOSFET
  • Category: MOSFET
  • Manufacturer: SANYO
  • Size: 107.93 KB
Download ECH8653 Datasheet PDF
SANYO
ECH8653
Features - - - - - General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Best suited for Li B charging and discharging switch. mon-drain type. Halogen free pliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 20 ±10 7.5 40 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1m A, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=4A Ratings min 20 1 ±10 1.0...