• Part: ECH8652
  • Description: P-Channel Silicon MOSFET
  • Category: MOSFET
  • Manufacturer: SANYO
  • Size: 114.17 KB
Download ECH8652 Datasheet PDF
SANYO
ECH8652
Features - - - - General-Purpose Switching Device Applications Low ON-resistance. 1.8V drive. posite type, facilitating high-density mounting. Halogen free pliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --12 ±10 --6 --40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS1 IDSS2 IGSS VGS(off) ⏐yfs⏐ Conditions ID=-1m A, VGS=0V VDS=-8V, VGS=0V VDS=-12V, VGS=0V VGS=±8V, VDS=0V VDS=-6V, ID=-1m A VDS=-6V,...