ECH8656
Features
- ON-resistance RDS(on)1=13mΩ (typ.)
- Halogen free pliance
- Protection diode in
- 1.8V drive
- Nch + Nch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature
VDSS VGSS ID IDP PD PT Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm)
Ratings 20
±10 7.5 40 1.3 1.5 150 --55 to +150
Unit V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-001
Top View 2.9
ECH8656-TL-H
0.15 0 to 0.02
Product &...
