• Part: ECH8659
  • Description: N-Channel Silicon MOSFET
  • Category: MOSFET
  • Manufacturer: SANYO
  • Size: 112.12 KB
Download ECH8659 Datasheet PDF
SANYO
ECH8659
Features - - - General-Purpose Switching Device Applications 4V drive. posite type, facilitating high-density mounting. Halogen free pliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings 30 ±20 7 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1m A, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=3.5A 1.2 2.2 3.7 Ratings min 30 1 ±10 2.6 typ max Unit V...