ECH8656
Features
- -
- N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
- -
ON-resistance RDS(on)1=13mΩ (typ.) Halogen free pliance Protection diode in
1.8V drive Nch + Nch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C
Package Dimensions unit : mm (typ) 7011A-001
Product & Package Information
- Package : ECH8
- JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel
Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3
Packing Type : TL
Marking
LOT No.
1 0.65
4 0.3
Electrical Connection
8 7 6 5
1 : Source1 2 :...
