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SW18N65D - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220F TO-247.
  • High ruggedness.
  • Low RDS(ON) (Typ 0.35Ω)@VGS=10V.
  • Low Gate Charge (Typ 79nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW18N65D
Manufacturer Samwin
File Size 932.69 KB
Description N-channel MOSFET
Datasheet download datasheet SW18N65D Datasheet

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Full PDF Text Transcription

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SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET Features TO-220F TO-247  High ruggedness  Low RDS(ON) (Typ 0.35Ω)@VGS=10V  Low Gate Charge (Typ 79nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED , Charger, PC Power 1 2 3 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 650V ID : 18A RDS(ON) : 0.
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