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SAMWIN
SW10N60K
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.5Ω)@VGS=10V ■ Gate Charge (Typical 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F 1 2 3
BVDSS : 600V ID : 10.0A RDS(ON) : 0.5ohm
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fasts witching time, excellent avalanche characteristics, low gate charge and especially in low on resistance. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
SW10N60K Datasheet
