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SW10N65
N-channel Enhanced mode TO-220F/TO-220 MOSFET
Features
TO- 220F
TO-220
High ruggedness Low RDS(ON) (Typ 1Ω)@VGS=10V Low Gate Charge (Typ 40nC) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC Power
12 3
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.