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SW10N65 - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO- 220F TO-220.
  • High ruggedness.
  • Low RDS(ON) (Typ 1Ω)@VGS=10V.
  • Low Gate Charge (Typ 40nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW10N65
Manufacturer SAMWIN
File Size 605.17 KB
Description N-channel MOSFET
Datasheet download datasheet SW10N65 Datasheet

Full PDF Text Transcription

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SW10N65 N-channel Enhanced mode TO-220F/TO-220 MOSFET Features TO- 220F TO-220  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 40nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Charge,LED,PC Power 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
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