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SW10N65K
N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/
TO-262/TO-220SF MOSFET
Features
TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF BVDSS : 650V
High ruggedness
Low RDS(ON) (Typ 0.36Ω)@VGS=10V Low Gate Charge (Typ29nC)
Improved dv/dt Capability
100% Avalanche Tested Application:LED, Charger,
PC Power
12 3
12 3
12 3
12 3
12 3
12 3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super junction technology of SAMWIN.
ID
: 10A
RDS(ON) :0.36 Ω
2
1 3
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
SW10N65K Datasheet
