Datasheet4U Logo Datasheet4U.com

SW100N10B - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220.
  • High ruggedness.
  • RDS(ON) (Max 10.5m Ω)@VGS=10V.
  • Gate Charge (Typ 106nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number SW100N10B
Manufacturer SEMIPOWER
File Size 509.71 KB
Description MOSFET
Datasheet download datasheet SW100N10B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SW100N03 N-channel MOSFET SAMWIN
SW10-0312 GaAs SPDT Reflective Switch Tyco
SW10-0313 Matched GaAs SPDT Switch Tyco
SW104 IC SW104 ETC
SW105D05EHISMF 1W High Isolation 3kVdc Surface Mount DC-DC Converter Superworld Electronics

Other Datasheets by SEMIPOWER

Part Number Description
SW100N10 MOSFET
SW100N10A MOSFET
SW10N60D MOSFET
SW10N65K N-Channel MOSFET
SW110N08A MOSFET

Full PDF Text Transcription

Click to expand full text
SAMWIN SW100N10B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 100V ID : 100A RDS(ON) : 10.
Published: |