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SAMWIN
SW100N03
N-channel MOSFET
Features
TO-220 TO-251 TO-252 TO-263
■ High ruggedness
■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typical 69nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1 2 3
1 2 3
1 2 3
1 2 3
BVDSS : 30V ID : 100A RDS(ON) : 5.3 mΩ
2
1. Gate 2. Drain 3. Source
General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.
SW100N03 Datasheet
