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SAMWIN
SW10N60D
N-channel TO-220F MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F 1
23
BVDSS : 600V ID : 10A RDS(ON) : 1.1Ω
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
SW10N60D Datasheet
