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SW180N75A - N-Channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

characteristics.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 2.8mΩ)@VGS=10V.
  • Low Gate Charge (Typ 178nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW180N75A
Manufacturer SEMIPOWER
File Size 520.49 KB
Description N-Channel MOSFET
Datasheet download datasheet SW180N75A Datasheet

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Full PDF Text Transcription

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SW180N75A Features  High ruggedness  Low RDS(ON) (Typ 2.8mΩ)@VGS=10V  Low Gate Charge (Typ 178nC)  Improved dv/dt Capability  100% Avalanche Tested  ApplicationSynchronous Rectification, Li Battery Protect Board, Inverter N-channel Enhanced mode TO-220 MOSFET TO-220 12 3 1. Gate 2. Drain 3. Source BVDSS : 75V ID : 180A RDS(ON) : 2.8mΩ 2 1 General Description 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
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