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SW160R02VT - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

characteristics.

Features

  • N-channel Enhanced mode DFN3.
  • 3 MOSFET.
  • High ruggedness.
  • Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ 9.4mΩ)@VGS=4.5V.
  • Low Gate Charge (Typ 15.4nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW160R02VT
Manufacturer Samwin
File Size 754.67 KB
Description N-channel MOSFET
Datasheet download datasheet SW160R02VT Datasheet

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Full PDF Text Transcription

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SW160R02VT Features N-channel Enhanced mode DFN3*3 MOSFET  High ruggedness  Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ 9.4mΩ)@VGS=4.5V  Low Gate Charge (Typ 15.4nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:DC-DC Converter, Inverter, Synchronous Rectification DFN3*3 1 8 2 7 3 6 4 5 BVDSS : 20V ID : 16A RDS(ON) : 12.3mΩ@VGS=2.5V 9.4mΩ@VGS=4.5V D DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source G General Description S This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
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