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STPSC16H065C
650 V power Schottky silicon carbide diode
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$ $ . 72$%
Features
No or negligible reverse recovery Switching behavior independent of
temperature High forward surge capability ECOPACK®2 compliant component
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
STPSC16H065C Datasheet
