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STPSC10TH13TI
Dual 650 V power Schottky silicon carbide diode in series
,QVXODWHG72$%
Features
No or negligible reverse recovery Switching behavior independent of
temperature Suited for specific bridge-less topologies High forward surge capability Insulated package:
– Capacitance: 7 pF – Insulated voltage: 2500 V rms
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
STPSC10TH13TI Datasheet
