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STP9NM60N - N-channel Power MOSFET

Description

This series of devices is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription

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STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP 3 2 1 TO-220 3 1 DPAK Figure 1. Internal schematic diagram $ ' 3 Table 1.
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