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STP9NB60 STP9NB60FP
N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH™ MOSFET
TYPE ST P9NB60 ST P9NB60FP
s s s s s
V DSS 600 V 600 V
R DS(on) < 0.8 Ω < 0.8 Ω
ID 9.0 A 9.0 A
TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP9NB60 Datasheet
