Click to expand full text
STD9NM40N, STP9NM40N
N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages
Datasheet — production data
Features
Order codes STD9NM40N STP9NM40N
VDSS@TJMAX RDS(on)max. ID
450 V
< 0.79 Ω 5.6 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
TAB
3 1
DPAK
TAB
3 2 1
TO-220
Figure 1.
STP9NM40N Datasheet
