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STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N
N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET
Features
Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID
3
7.5A
1
3 2
2 1
7.5A 7.5A 7.5A(1)
3 1
IPAK TO-220
1. Limited only by maximum temperature allowed ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
DPAK
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
STP9NM50N Datasheet
