Datasheet4U Logo Datasheet4U.com

STP9N80K5 - N-channel Power MOSFET

Description

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STP9N80K5 STW9N80K5 VDS 800 V RDS(on) max. 0.90 Ω ID 7A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP9NB50 PowerMesh MOSFET ST Microelectronics
STP9NB50FP PowerMesh MOSFET ST Microelectronics
STP9NB60 PowerMesh MOSFET ST Microelectronics
STP9NC60 N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET ST Microelectronics
STP9NC60FP N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP9N60M2 N-channel Power MOSFET
STP9N65M2 N-channel Power MOSFET
STP9NK80Z N-channel Power MOSFET
STP9NM40N N-channel Power MOSFET
STP9NM50N N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STP9N80K5 STW9N80K5 VDS 800 V RDS(on) max. 0.90 Ω ID 7A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Published: |