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LET9130 - RF POWER TRANSISTORS Ldmos Enhanced Technology

Description

The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V.

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Datasheet Details

Part number LET9130
Manufacturer STMicroelectronics
File Size 57.63 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology
Datasheet download datasheet LET9130 Datasheet
Additional preview pages of the LET9130 datasheet.

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LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % • EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % • GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION 1 ORDER CODE LET9130 M265 epoxy sealed BRANDING LET9130 PIN CONNECTION DESCRIPTION The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V.
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