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LET9060 - RF power transistor

Description

The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET.

It is designed for high gain, broadband, commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V.
  • New RF plastic package.

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Datasheet preview – LET9060

Datasheet Details

Part number LET9060
Manufacturer STMicroelectronics
File Size 217.50 KB
Description RF power transistor
Datasheet download datasheet LET9060 Datasheet
Additional preview pages of the LET9060 datasheet.

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Full PDF Text Transcription

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LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V ■ New RF plastic package Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060’s superior linearity performance makes it an ideal solution for base station applications.
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