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LET9045S - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Description

The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies up to 1 GHz.

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Datasheet Details

Part number LET9045S
Manufacturer STMicroelectronics
File Size 292.71 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Datasheet download datasheet LET9045S Datasheet
Additional preview pages of the LET9045S datasheet.

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Full PDF Text Transcription

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LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
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