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LET9060C - RF Power Transistor

Description

The LET9060C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The LET9060C is designed for high gain and broadband performance operating in common source mode at 28 V.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz.
  • POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz.
  • BeO free package.
  • In compliance with the 2002/95/EC European directive.

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Datasheet preview – LET9060C

Datasheet Details

Part number LET9060C
Manufacturer STMicroelectronics
File Size 146.92 KB
Description RF Power Transistor
Datasheet download datasheet LET9060C Datasheet
Additional preview pages of the LET9060C datasheet.

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Full PDF Text Transcription

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LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC European directive Description The LET9060C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. M243 epoxy sealed Figure 1. Pin out 1. Drain 2. Gate 1 3 2 3. Source Table 1.
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