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LET9085 - RF POWER TRANSISTORS Ldmos Enhanced Technology

Description

The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V.

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Datasheet Details

Part number LET9085
Manufacturer STMicroelectronics
File Size 35.14 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology
Datasheet download datasheet LET9085 Datasheet
Additional preview pages of the LET9085 datasheet.

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Full PDF Text Transcription

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LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 % • EDGE PERFORMANCES POUT = 35 W EFF. = 35 % • GSM PERFORMANCES POUT = 75 W EFF. = 55 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION PIN CONNECTION 1 M265 epoxy sealed ORDER CODE LET9085 BRANDING LET9085 DESCRIPTION The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V.
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